Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Taiwan Semiconductor Manufacturing Company (TSMC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001129
Reference41 articles.
1. Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
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4. Impact of gate workfunction on device performance at the 50 nm technology node
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