Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks-Reference-Cited by-同舟云学术

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Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks

Published:2021 Issue: Volume:2 Page:72-77
ISSN:2644-1292
Container-title:IEEE Open Journal of Nanotechnology
language:
Short-container-title:IEEE Open J. Nanotechnol.

Author:

Chang Wen-Teng^ORCID,Li Meng-His,Hsu Chun-Hao,Lin Wen-Chin,Yeh Wen-Kuan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Medicine

Link

http://xplorestaging.ieee.org/ielx7/8782713/9316416/09528922.pdf?arnumber=9528922

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Stacked Work Function Metals on Gate Stress Reliability of n- and p-FinFETs;IEEE Transactions on Electron Devices;2023-08

2. FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis;Micromachines;2023-07-31

3. Comparative analysis of ferroelectric quad-FinFET with and without Si₃N₄ spacer on analog/RF, linearity performance and digital inverter application with temperature variation;Ferroelectrics;2023-07-29

4. Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks;ECS Journal of Solid State Science and Technology;2023-03-01

5. Vertical GeSn nanowire MOSFETs for CMOS beyond silicon;Communications Engineering;2023-02-25

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