Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

Published:2020-04 Issue: Volume:109 Page:104933
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Huang Kuei-Wen,Chang Teng-Jan,Wang Chun-Yuan,Yi Sheng-Han,Wang Chin-I.,Jiang Yu-Sen,Yin Yu-Tung,Lin Hsin-Chih,Chen Miin-Jang

Funder

Taiwan Semiconductor Manufacturing Company

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference60 articles.

1. Direct tunneling leakage current and scalability of alternative gate dielectrics;Yeo;Appl. Phys. Lett.,2002

2. Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides;Lo;IBM J. Res. Dev.,1999

3. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's;Lo;IEEE Electron. Device Lett.,1997

4. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing;Lee;Appl. Phys. Lett.,2000

5. Band offsets of wide-band-gap oxides and implications for future electronic devices;Robertson;J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,2000

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indirect Enhancement of ALD Thin-Film Properties Induced by the ECAP Modification of an As-Extruded Mg-Ca Alloy;Micromachines;2024-08-03

2. Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor With High-k Gate Dielectric;IEEE Electron Device Letters;2024-07

3. Remote plasma chemical vapor deposition of silicon oxycarbide film with a styrene-containing precursor and in situ O2 plasma treatment;Thin Solid Films;2024-06

4. Intrinsically Photopatternable High‐k Polymer Dielectric for Flexible Electronics;Advanced Functional Materials;2024-04-22

5. Atomic layer deposition mechanism of hafnium dioxide using hafnium precursor with amino ligands and water;Surfaces and Interfaces;2024-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3