Comparison of single‐ and double‐heterostructure AlGaAs/InGaP red light‐emitting diodes prepared by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350864
Reference16 articles.
1. Materials for light emitting diodes
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3. GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laser
4. Liquid phase epitaxial growth of GaInP/AlGaAs double heterostructures for visible lasers
5. Liquid‐phase‐epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method
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1. High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties;Journal of Crystal Growth;2007-01
2. Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates;Journal of Physics and Chemistry of Solids;2001-03
3. Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates;Solid State Communications;2000-09
4. Activation efficiency characteristics in P and Ge-doped In0.5Ga0.5P epilayers;Solid State Communications;1999-10
5. Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy;Journal of Applied Physics;1998-02-15
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