Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates-Reference-Cited by-同舟云学术

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Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates

Published:2000-09 Issue:3 Volume:116 Page:163-166
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Kim T.W,Han S.Y,Park H.L

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. High‐efficiency InGaP light‐emitting diodes on GaP substrates

2. Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes

3. Comparison of single‐ and double‐heterostructure AlGaAs/InGaP red light‐emitting diodes prepared by liquid‐phase epitaxy

4. Alloy composition dependence of photoexcited carrier dynamics in GaxIn1−xP/InP:Fe (x<0.18)

5. Liquid-Phase Epitaxial Growth ofIn0.35Ga0.65Pon GaP Substrates from Sn-Rich Solutions

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1. Two-band conduction in electron-irradiated n-InSe single crystals;physica status solidi (b);2014-09-26

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