High‐efficiency InGaP light‐emitting diodes on GaP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105024
Reference12 articles.
1. Nitrogen trap bound states in In1−xGaxP
2. Electronic Structure and Luminescence Processes in In1−xGaxP Alloys
3. Band structure enhancement and optimization of radiative recombination in GaAs1−x Px:N (and In1−x Gax P:N)
4. 660 nm In0.5Ga0.5P light‐emitting diodes on Si substrates
5. 660 nm In0.5Ga0.5P light‐emitting diodes on Si substrates
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