Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Kwang Park;Stinson;Appl. Phys. Lett.,1991
2. Gas‐source molecular beam epitaxial growth, characterization, and light‐emitting diode application of InxGa1−xP on GaP(100)
3. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
4. The preparation of device quality gallium phosphide by metal organic chemical vapor deposition
5. MO-CVD growth of GaP and GaAlP
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