High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
2. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
3. On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs
4. Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
5. Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy
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1. Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition;Optik;2019-01
2. Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering;Journal of Alloys and Compounds;2019-01
3. Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure;Journal of Crystal Growth;2013-05
4. Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM;Journal of Crystal Growth;2012-05
5. Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions;Superlattices and Microstructures;2009-04
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