Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition

Author:

Yuan Huibo,Li LinORCID,Zhang Jing,Li Zaijin,Zeng Lina,Wang Yong,Qu Yi,Ma Xiaohui,Liu Guojun

Funder

National Natural Science Foundation of China

NSAF

Foundation of Changchun University of Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers;Zhang;J. Appl. Phys.,2009

2. Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature;Ma;J. Appl. Phys.,2011

3. Temperature characteristic of 1.06μm InGaAs/InGaAsP quantum well laser diode;Li;Chinese J. Lumin.,2012

4. Thickness-modulated InGaAs/GaAsP superlattice solar cells on vicinal substrates;Fujii;J. Appl. Phys.,2015

5. Effect of GaAs Step Layer Thickness in InGaAs/GaAsP Stepped Quantum-Well Solar Cell;Wen;IEEE J. Photovolt.,2013

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