Effect of GaAs insertion layer on the properties improvement of InGaAs/AlGaAs multiple quantum wells grown by metal-organic chemical vapor deposition
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
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4. The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures;Das;J. Lumin,2017
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1. Investigation of the growth rate on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and InGaAs single layer grown by molecular beam epitaxy (MBE);Materials Science in Semiconductor Processing;2025-01
2. InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property;Materials Science in Semiconductor Processing;2024-09
3. Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells;Journal of Alloys and Compounds;2024-05
4. Tailoring the Optical Properties of Mocvd Grown Ingaas/Inalgaas Mqws with Gaas Isl;2024
5. Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD;Applied Physics Letters;2023-12-25
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