Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3663309
Reference15 articles.
1. High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers
2. High-power 894 nm monolithic distributed-feedback laser
3. Strain-balanced quantum well solar cells
4. Spectral response and I-V characteristics of large well number multi quantum well solar cells
5. Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using anin situcurvature sensor
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1. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering;Journal of Vacuum Science & Technology B;2021-12
2. In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors;Applied Physics Express;2020-04-20
3. Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition;Optik;2019-01
4. In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells;Journal of Crystal Growth;2017-10
5. Effects of Strain in Low-Dimensional Semiconductor Structures;Nanoscience and Nanotechnology Letters;2017-07-01
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