Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double‐heterostructure material
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655445
Reference11 articles.
1. Luminescence from In0.5Ga0.5P prepared by vapor‐phase epitaxy
2. Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs
3. Reproducible Liquid‐Phase‐Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser Diodes
4. Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet
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