Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366931
Reference33 articles.
1. AlGaInP visible laser diodes grown on misoriented substrates
2. Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
3. Short-wavelength InGaAlP visible laser diodes
4. Comparison of single‐ and double‐heterostructure AlGaAs/InGaP red light‐emitting diodes prepared by liquid‐phase epitaxy
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1. On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy;Thin Solid Films;2012-08
2. Electrical properties of silicon- and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2002-02
3. Ellipsometric Study of Te and Ge Co-Doped In0.5Ga0.5P Alloys;physica status solidi (a);2001-04
4. Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy;Advanced Microelectronic Processing Techniques;2000-10-24
5. V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy;Optical Materials;2000-03
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