Liquid phase epitaxial growth of GaInP/AlGaAs double heterostructures for visible lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double‐heterostructure material
2. GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laser
3. Proc. 9th Intern. Symp. on GaAs and Related Compounds;Ohta,1982
4. GaxIn1−xP Liquid phase epitaxial growth on (001), (111)a, and (111)b GaAs substrates
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Concentration dependent photoluminescence of Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy;Journal of Applied Physics;1997-10-15
2. Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy;Solid-State Electronics;1993-07
3. Observation of staggered band lineup in In0.5Ga0.5P/Al0.43Ga0.57As heterojunction grown by liquid phase epitaxy;Applied Physics Letters;1993-05-24
4. The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy;Journal of Applied Physics;1992-05-15
5. Comparison of single‐ and double‐heterostructure AlGaAs/InGaP red light‐emitting diodes prepared by liquid‐phase epitaxy;Journal of Applied Physics;1992-04-15
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