Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy-Reference-Cited by-同舟云学术

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Published:2015-01-14 Issue:2 Volume:117 Page:025301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ravikiran L.,Dharmarasu N.,Radhakrishnan K.,Agrawal M.,Yiding Lin,Arulkumaran S.,Vicknesh S.^ORCID,Ng G. I.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905620

Reference30 articles.

1. Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

2. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

3. Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

4. Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility

5. Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

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