Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

Published:2012-08-23 Issue:9 Volume:5 Page:091003
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Dharmarasu Nethaji,Radhakrishnan K.,Agrawal Manvi,Ravikiran Lingaparthi,Arulkumaran Subramaniam,Lee Kenneth. E.,Ing Ng Geok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=9/a=091003/pdf

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploiting Co-C interface and graphitic carbon belts for enhanced structural stability of a porous layered Co-C catalyst for CO2 hydrogenation;Chemical Engineering Journal;2024-06

2. Ingenious golden section search MPPT algorithm for PEM fuel cell power system;Neural Computing and Applications;2021-01-02

3. Fiber Raman Amplifiers and Fiber Raman Lasers;Micromachines;2020-11-27

4. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications;Thin Solid Films;2020-08

5. Stabilization of uni-directional water wave trains over an uneven bottom;Nonlinear Dynamics;2020-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP