Author:
Chugh Nisha,Kumar Manoj,Bhattacharya Monika,Gupta R. S.
Funder
Recruitment and Assesment Centre
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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4. Chugh N, Kumar M, Bhattacharya M, Gupta RS (2019a) Sheet carrier concentration and current-voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure HEMT incorporating the effect of traps. Microsyst Technol. https://doi.org/10.1007/s00542-019-04322-5
5. Chugh N, Kumar M, Bhattacharya M, Gupta RS (2019b) Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and microwave frequency applications sheet carrier concentration and current-voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure HEMT incorporating the effect of traps. Semicond J 53(13):39–46 (in Press)
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