Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study-Reference-Cited by-同舟云学术

Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study

Published:2024-01-13 Issue:2 Volume:25 Page:210-217
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Trans. Electr. Electron. Mater.

Author:

Padmaja Pydimarri,Erigela Radhamma,Reddy D. Venkatarami,Faruq SK Umar,Krishnamurthy A.,Balaji B.,Kumar M. Lakshmana,Cheerla Sreevardhan,Agarwal Vipul,Gowthami Y.

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s42341-024-00511-w.pdf

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