Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications
Author:
Funder
Defence Research and Development Organisation
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00881-9.pdf
Reference25 articles.
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2. Mizutani T, Ohno Y, Akita M, Kishimoto S, Maezawa K (2003) A study on current collapse in AlGaN/GaN HEMTs induced by Bias stress. IEEE Transactions on Electron Devices 50:2015–2020. https://doi.org/10.1109/TED.2003.816549
3. Meng Q, Lin Q, Jing W, Han F, Zhao M, de Jiang Z (2018) TCAD simulation for non resonant terahertz detector based on Double-Channel GaN/AlGaN high-Electron-mobility transistor. IEEE Transactions on Electron Devices 65:4807–4813. https://doi.org/10.1109/TED.2018.2869291
4. Ping AT, Chen Q, Yang JW, Khan MA, Adesida I (1998) DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates. IEEE Electron Device Lett 19:54–56. https://doi.org/10.1109/55.658603
5. Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri RW, Hussain MA, Saha D (2012) Double-channel AlGaN/GaN high electron mobility transistor with back barriers. IEEE Electron Device Lett 33:1690. https://doi.org/10.1109/LED.2012.2218272
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