Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Published:2014-05 Issue:5 Volume:29 Page:2164-2173
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Huang Huolin,Liang Yung C.,Samudra Ganesh S.,Chang Ting-Fu,Huang Chih-Fang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/6709815/06657773.pdf?arnumber=6657773

Cited by 84 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations into the robustness of the peak turn-on current slope method for junction temperature sensing in p-GaN HEMTs;Semiconductor Science and Technology;2024-08-27

2. Progress of GaN-based E-mode HEMTs;Journal of Physics D: Applied Physics;2024-07-23

3. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

4. Dynamic R_ON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors;physica status solidi (a);2024-06-11

5. Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers;Solid-State Electronics;2024-06

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