Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate-Reference-Cited by-同舟云学术

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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

Published:2024-07-13 Issue:9 Volume:53 Page:5555-5565
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Lino L.^ORCID,Saravana Kumar R.,Mohanbabu A.,Murugapandiyan P.

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11664-024-11289-1.pdf

Reference41 articles.

1. A.S. Augustine Fletcher, D. Nirmal, J. Ajayan, and L. Arivazhagan, AEU Int. J. Electron. Commun. 99, 325 (2019).

2. K. Vyas, D.H.G. Espinosa, D. Hutama, S.K. Jain, R. Mahjoub, E. Mobini, K.M. Awan, J. Lundeen, and K. Dolgaleva, Adv. Phys. X 7, 2097020 (2022).

3. S.K. Dubey and A. Islam, Microsyst. Technol. 29, 515 (2022).

4. R. Saravana Kumar, A. Mohanbabu, N. Mohankumar, and D. Godwin Raj, Int. J. Electron. 105, 446 (2018).

5. P. Murugapandiyan, A. Mohanbabu, V. RajyaLakshmi, V.N. Ramakrishnan, A. Varghese, M.O.H.D. Wasim, S. Baskaran, R. SaravanaKumar, and V. Janakiraman, J. Sci. Adv. Mater. Devices 5, 192 (2020).

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