Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739408
Reference30 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
3. High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
4. Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
5. AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)
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