Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering
Author:
Affiliation:
1. Department of Physics, School of Physical Science and Technology, Inner Mongolia University 1 , Hohhot 010021, China
2. Ordos Institute of Technology 2 , Ordos 017000, China
Abstract
Funder
National Natural Science Foundation of China
Research Program of Science and Technology at Universities of Inner Mongolia Autonomous Region
Publisher
AIP Publishing
Link
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0204253/19916587/175703_1_5.0204253.pdf
Reference37 articles.
1. Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors
2. Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity
3. Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor
4. Impact of CF4plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
5. Power electronics on InAlN/(In)GaN: Prospect for a record performance
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