Impact of CF4plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=3/a=031002/pdf
Reference20 articles.
1. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
2. 100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$
3. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
4. Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors
5. Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
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