100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$-Reference-Cited by-同舟云学术

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$

Published:2010-04 Issue:4 Volume:31 Page:293-295
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Haifeng Sun ,Alt A.R.,Benedickter H.,Feltin E.,Carlin J.-F.,Gonschorek M.,Grandjean N.,Bolognesi C.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5437354/05419078.pdf?arnumber=5419078

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications;Chinese Physics B;2023-11-01

2. Self-heating in Short-channel GaN HEMTs: Maximum Channel Temperature and Equivalent Channel Temperature;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

3. A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN;IEEE Transactions on Electron Devices;2021-11

4. Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications;IEEE Journal of the Electron Devices Society;2021

5. Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources;IEEE Transactions on Electron Devices;2020-08

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