Self-heating in Short-channel GaN HEMTs: Maximum Channel Temperature and Equivalent Channel Temperature
Author:
Affiliation:
1. University of Waterloo,Waterloo,Canada
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798009.pdf?arnumber=9798009
Reference12 articles.
1. High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
2. 107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies
3. Thermal simulation of high power GaN-on-diamond substrates for HEMT applications
4. Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-temperature principle for evaluating electrothermal performance of GaN HEMTs;Applied Physics Letters;2024-01-22
2. Near-junction thermal managements of electronics;Advances in Heat Transfer;2023
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