Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2716846
Reference18 articles.
1. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
2. Room temperature photo-CVD SiO2layers on AlGaN and AlGaN/GaN MOS-HFETs
3. Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors
4. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors
5. High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator
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