High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator-Reference-Cited by-同舟云学术

High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator

Published:2005-08-15 Issue:7 Volume:87 Page:073504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maeda Narihiko,Wang Chengxin,Enoki Takatomo,Makimoto Toshiki,Tawara Takehiko

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2012535

Reference19 articles.

1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

2. AlGaN/GaN HEMTs grown on SiC substrates

3. High Al-content AlGaN/GaN MODFETs for ultrahigh performance

4. Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors

5. High-temperature electron transport properties in AlGaN/GaN heterostructures

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