Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams-Reference-Cited by-同舟云学术

Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

Published:2018-04-21 Issue:15 Volume:123 Page:155302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Uedono Akira¹^ORCID,Nabatame Toshihide²,Egger Werner³,Koschine Tönjes³,Hugenschmidt Christoph⁴,Dickmann Marcel⁴,Sumiya Masatomo²^ORCID,Ishibashi Shoji⁵^ORCID

Affiliation:

1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

3. Universität der Bundeswehr München, Institut für Angewandte Physik und Messtechnik, 85577 Neubiberg, Germany

4. Physics Department E21 and Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München, 85748 Garching, Germany

5. Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

Funder

New Energy and Industrial Technology Development Organization

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science London

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026831

Reference58 articles.

1. GaN-Based RF Power Devices and Amplifiers