High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2058206
Reference16 articles.
1. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
2. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
3. Fabrication of AlGaN/GaN double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SiO2and SiN as gate insulators
4. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
5. Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
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