Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al<sub>2</sub>O<sub>3</sub> by Tetramethylammonium Hydroxide Wet Treatment-Reference-Cited by-同舟云学术

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al₂O₃ by Tetramethylammonium Hydroxide Wet Treatment

Published:2024-01-11 Issue:1 Volume:6 Page:150-154
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Yu¹²³^ORCID,Zhou Jiaan³^ORCID,Xing Runxian³,Lu Shaoqian³,Yang An¹³^ORCID,Guo Bohan¹²³,Liu Bosen³,Du Zhongkai⁴,Yu Guohao¹³,Zeng Zhongming¹³^ORCID,Cai Yong¹³,Zhang Baoshun¹³

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

2. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

3. Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

4. Suzhou Powerhouse Electronics Technology Co., Ltd., Suzhou, Jiangsu 215123, China

Funder

Jiangsu Provincial Key Research and Development Program

Key Research and Development Program of Jiangxi Province

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01427

Reference25 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

3. Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers

4. Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors

5. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors