Author:
Balachander Krishnan,Arulkumaran Subramaniam,Sano Y.,Egawa Takashi,Baskar Krishnan
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller, and U. K. Mishra, IEDM Tech. Dig. 925 (IEEE, Piscataway, NJ, 1999).
2. Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
3. Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
4. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
5. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
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