Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1571655
Reference17 articles.
1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2. Electric breakdown in GaN p‐n junctions
3. Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors
4. Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET
5. Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n+ diodes
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