Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs
Author:
Affiliation:
1. College of Microelectronics, Beijing University of Technology, Beijing, China
2. Nanjing Electronic Devices Institute, Nanjing, China
Funder
National Natural Science Foundation of China
Beijing Municipal Education Commission
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10138776.pdf?arnumber=10138776
Reference75 articles.
1. Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection
2. Persistent photoconductivity in n-type GaN
3. Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis
4. High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation
5. Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMT
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation;IEEE Transactions on Electron Devices;2024-08
2. Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs;IEEE Journal of the Electron Devices Society;2024
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