Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection-Reference-Cited by-同舟云学术

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Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Shi Yuanyuan,Zhou Qi,Cheng Qian,Wei P.,Zhu L.,Wei D.,Zhang A.,Chen Wanjun,Zhang Bo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393611.pdf?arnumber=8393611

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure;Applied Physics Letters;2024-06-10

2. P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V;IEEE Electron Device Letters;2024-06

3. Preconditioning of Ohmic p-GaN power HEMT for reproducible V measurements;Solid-State Electronics;2024-01

4. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress;IEEE Transactions on Electron Devices;2024

5. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors;Micromachines;2023-12-30

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