Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

Abstract

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (Vgs < Vth). Sharp fluctuations happen when the temperature rises with a gate voltage of Vth < Vgs < VFB. The conductance steadily decreases with increasing temperature after increasing the gate bias to Vgs > VFB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires.