A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors-Reference-Cited by-同舟云学术

A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors

Published:2023-10 Issue:10 Volume:70 Page:5087-5091
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yan Zhaoheng¹^ORCID,Yuan Song¹,Jiang Xi¹^ORCID,Deng Chaofan¹,Pang Zhenjiang²,Bu Xiaosong²,Hong Haimin²,Gong Xiaowu¹,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Shenzhen Smartchip Microelectronics Technology Company Ltd., Shenzhen, China

Funder

Young Scientists Fund of National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10235264.pdf?arnumber=10235264

Reference26 articles.

1. Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

2. Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

3. Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode

4. Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

5. Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

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