Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2058173
Reference40 articles.
1. 9.2 W∕mm (13.8 W) AlGaN∕GaN HEMTs at 10 GHz and 55 V drain bias
2. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
3. GaN: Processing, defects, and devices
4. AlGaN/GaN HEMTs-an overview of device operation and applications
5. Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
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