Author:
Ghosh Saptarsi,Bag Ankush,Jana Sanjay K.,Mukhopadhyay Partha,Dinara Syed Mukulika,Kabi Sanjib,Biswas Dhrubes
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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1. Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform;Journal of Vacuum Science & Technology A;2024-03-06
2. Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
3. Exploring the Next Phase in Gallium Nitride Photonics;Semiconductors and Semimetals;2017
4. Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-07
5. Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis;AIP Advances;2015-04