Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis-Reference-Cited by-同舟云学术

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Published:2015-04 Issue:4 Volume:5 Page:047136
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Dinara Syed Mukulika¹^ORCID,Jana Sanjay Kr.¹,Ghosh Saptarsi¹,Mukhopadhyay Partha¹,Kumar Rahul¹,Chakraborty Apurba²,Bhattacharya Sekhar³,Biswas Dhrubes²

Affiliation:

1. Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur, India 721302

2. Dept. of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India 721 302

3. SSN Research Center, Tamilnadu, India 603110

Funder

Department of Science and Technology, Ministry of Science and Technology (DST)

Department of Electronics and Information Technology, Ministry of Communications and Information Technology (DeitY)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/4/1.4919098.pdf?itemId=/content/aip/journal/adva/5/4/10.1063/1.4919098&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference27 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

3. H. Morkoc, Handbook of Nitride Semiconductors and Devices (Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008), Vol. 1, pp. 229-231.

4. Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

5. Polarization Induced Effects in AlGaN/GaN Heterostructures

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