Confinement of Electrons at the LaInO <sub>3</sub> /BaSnO <sub>3</sub> Heterointerface-Reference-Cited by-同舟云学术

Confinement of Electrons at the LaInO ₃ /BaSnO ₃ Heterointerface

Published:2022-10-26 Issue:35 Volume:9 Page:2201279
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Pfützenreuter Daniel¹^ORCID,Kim Seonghyeon²,Cho Hyeongmin²,Bierwagen Oliver³^ORCID,Zupancic Martina¹^ORCID,Albrecht Martin¹,Char Kookrin²^ORCID,Schwarzkopf Jutta¹^ORCID

Affiliation:

1. Leibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin Germany

2. Institute of Applied Physics Department of Physics and Astronomy Seoul National University Seoul 08826 South Korea

3. Paul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5‐7 10117 Berlin Germany

Funder

Leibniz-Gemeinschaft

European Regional Development Fund

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201279

Reference42 articles.

1. Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin films promoting selective surface acoustic wave propagation

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3. Superconducting Interfaces Between Insulating Oxides

4. Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces

5. Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

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