Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3-Reference-Cited by-同舟云学术

Interfacial Properties of the SnO/κ-Ga₂O₃ p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga₂O₃

Published:2023-09-21 Issue:39 Volume:15 Page:45997-46009
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Rajabi Kalvani Payam¹^ORCID,Parisini Antonella¹^ORCID,Sozzi Giovanna²,Borelli Carmine¹,Mazzolini Piero¹³^ORCID,Bierwagen Oliver⁴,Vantaggio Salvatore¹,Egbo Kingsley⁴,Bosi Matteo³^ORCID,Seravalli Luca³^ORCID,Fornari Roberto¹³^ORCID

Affiliation:

1. University of Parma, Department of Mathematical, Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy

2. University of Parma, Department of Engineering and Architecture, Parco Area delle Scienze 181/A, 43124 Parma, Italy

3. IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, Italy

4. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

Funder

Leibniz-Gemeinschaft

European Commission

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c08841

Reference69 articles.

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