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9.2 W∕mm (13.8 W) AlGaN∕GaN HEMTs at 10 GHz and 55 V drain bias

  • Published:2003 Issue:2 Volume:39 Page:245
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Zhang A.P.,Rowland L.B.,Kaminsky E.B.,Tucker J.B.,Kretchmer J.W.,Allen A.F.,Cook J.,Edward B.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A density functional theory study of Au-decorated gallium nitride nano-tubes as chemical sensors for the recognition of sulfonamide;Journal of Sulfur Chemistry;2022-05-19

2. Recent advances in wide bandgap semiconductor-based gas sensors;Semiconductor Gas Sensors;2013

3. Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11

4. Advances in Hydrogen Gas Sensor Technology and Implementation in Wireless Sensor Networks;Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications;2011-04-25

5. Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth;Journal of Electronic Materials;2010-03-02
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