Design and Investigation of Recessed-T-Gate Double Channel HEMT with InGaN Back Barrier for Enhanced Performance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://link.springer.com/content/pdf/10.1007/s13369-021-06157-7.pdf
Reference27 articles.
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2. Mari, D.: Cermets and Hardmetals. Encycl. Mater. Sci. Technol. 96(2), 1118–1122 (2001). https://doi.org/10.1016/b0-08-043152-6/00209-6
3. Frayssinet, E., et al.: High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Appl. Phys. Lett. 77(16), 2551–2553 (2000). https://doi.org/10.1063/1.1318236
4. Feng, Z.H.; Zhou, Y.G.; Cai, S.J.; Lau, K.M.: Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification. Appl. Phys. Lett. 85(22), 5248–5250 (2004). https://doi.org/10.1063/1.1828231
5. Lin, Z.; Kim, H.; Lee, J.; Lu, W.: Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures. Appl. Phys. Lett. 84(9), 1585–1587 (2004). https://doi.org/10.1063/1.1650875
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