Enhanced thermal stability of the two-dimensional electron gas in GaN∕AlGaN∕GaN heterostructures by Si3N4 surface-passivation-induced strain solidification
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1828231
Reference20 articles.
1. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
3. Proceedings of 39th Annual International Reliability Physics Symposium;Kim H.,2001
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2024-01-01
2. Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması;Karadeniz Fen Bilimleri Dergisi;2023-12-15
3. Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx;Advanced Materials Interfaces;2023-12
4. Linearity analysis of T-gate HEMT with graded back-barrier for wireless applications;2022 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT);2022-07-08
5. High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors;Journal of Electronic Packaging;2022-03-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3