Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması-Reference-Cited by-同舟云学术

Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması

Published:2023-12-15 Issue:4 Volume:13 Page:1377-1385
ISSN:2564-7377
Container-title:Karadeniz Fen Bilimleri Dergisi
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Author:

BİLGİLİ Ahmet¹^ORCID,AKPINAR Ömer¹^ORCID,KAYA Naki²^ORCID,ÖZTÜRK Mustafa¹^ORCID

Affiliation:

1. GAZI UNIVERSITY

2. İSTANBUL GELİŞİM ÜNİVERSİTESİ, İSTANBUL GELİŞİM MESLEK YÜKSEKOKULU

Abstract

In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.

Funder

Presidency Strategy and Budget Directorate

Publisher

Karadeniz Fen Bilimleri Dergisi

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