Deep donor levels in Sn‐doped AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350445
Reference23 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Direct evidence of theDXcenter link to theL‐conduction‐band minimum in GaAlAs
3. Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs
4. Evidence for large lattice relaxation at theDXcenter in Si-dopedAlxGa1−xAs
5. Electron trapping by metastable effective-mass states ofDXdonors in indirect-band-gapAlxGa1−xAs:Te
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1. Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors;Journal of Applied Physics;2004-07
2. Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures;Semiconductor Science and Technology;2000-08-09
3. Fine structure of DX(Sn) centers in AlxGa1−xAs;Journal of Applied Physics;1998-09
4. Conducting wires embedded in an i-GaAs matrix for electronic applications;Microelectronic Engineering;1998-08
5. DX-like properties of theEL6defect family in GaAs;Physical Review B;1998-07-15
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