Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures-Reference-Cited by-同舟云学术

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Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures

Published:2000-08-09 Issue:9 Volume:15 Page:895-901
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kulbachinskii V A,Kytin V G,Golikov A V,Lunin R A,Schaijk R T F van,Visser A de,Senichkin A P,Bugaev A S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Sn delta-doping in GaAs

2. Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAs

3. Magnetotransport in GaAs δ-doped by Sn

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control of positive and negative photo- and thermal-responses in a single PbI₂@CH₃NH₃PbI₃ micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation;Materials Horizons;2024

2. Negative and Positive Persistent Photoconductance in Graphene;Nano Letters;2011-10-10

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