Electron trapping by metastable effective-mass states ofDXdonors in indirect-band-gapAlxGa1−xAs:Te-Reference-Cited by-同舟云学术

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Electron trapping by metastable effective-mass states ofDXdonors in indirect-band-gapAlxGa1−xAs:Te

Published:1989-11-15 Issue:14 Volume:40 Page:9671-9682
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Dmochowski Janusz E.,Dobaczewski Leszek,Langer Jerzy M.,Jantsch Wolfgang

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.9671/fulltext

Reference90 articles.

1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

2. Long‐lifetime photoconductivity effect inn‐type GaAlAs

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