Conducting wires embedded in an i-GaAs matrix for electronic applications-Reference-Cited by-同舟云学术

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Conducting wires embedded in an i-GaAs matrix for electronic applications

Published:1998-08 Issue: Volume:43-44 Page:319-324
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kulbachinskii V.A,Lunin R.A,Kytin V.G,Bugaev A.S,Senichkin A.P,Demin A.V

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. H. Sasaki, in: Kuchar et al. (Eds.), Localization and Confinement of Electrons in Semiconductors. Springer Series in Solid State Science, Springer, Heidelberg, 1990, V. 97, p. 2.

2. Superlattice Structure Observation for (AlAs)1/2(GaAs)1/2Grown on (001) Vicinal GaAs Substrates

3. Direct synthesis of semiconductor quantum-wire and quantum-dot structures

4. Nucleation effects during MBE growth of Sn-Doped GaAs

5. Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and electronic properties of tin quantum wires formed on vicinal surface of GaAs;SPIE Proceedings;2002-08-09

2. RHEED Observation of Tin Atomic Chains Formation on Vicinal Gallium Arsenide Plane;MRS Proceedings;2000

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